- 您现在的位置：买卖IC网 > Sheet目录449 > IRLR120NTRR (International Rectifier)MOSFET N-CH 100V 10A DPAK
IRLR/U120N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C Reference to 25°C, I D = 1mA
–––
–––
0.185 V GS = 10V, I D = 6.0A ?
––– R G = 11 ?, V GS = 5.0V
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
1.0
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
35
23
22
0.225 W V GS = 5.0V, I D = 6.0A ?
0.265 V GS = 4.0V, I D = 5.0A ?
2.0 V V DS = V GS , I D = 250μA
––– S V DS = 25V, I D = 6.0A ?
25 V DS = 100V, V GS = 0V
μA
250 V DS = 80V, V GS = 0V, T J = 150°C
100 V GS = 16V
nA
-100 V GS = -16V
20 I D = 6.0A
4.6 nC V DS = 80V
10 V GS = 5.0V, See Fig. 6 and 13 ??
––– V DD = 50V
––– I D = 6.0A
ns
––– R D = 8.2 ?, See Fig. 10 ??
L D
Internal Drain Inductance
–––
4.5 –––
nH
Between lead,
6mm (0.25in.)
D
L S
Internal Source Inductance
–––
7.5 –––
from package
and center of die contact ?
G
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
440 ––– V GS = 0V
97 ––– pF V DS = 25V
50 ––– ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
––– –––
––– –––
10
35
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Notes:
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3 V T J = 25°C, I S = 6.0A, V GS = 0V ?
––– 110 160 ns T J = 25°C, I F =6.0A
––– 410 620 nC di/dt = 100A/μs ??
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 25V, starting T J = 25°C, L = 4.7mH
R G = 25 ? , I AS = 6.0A. (See Figure 12)
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? This is applied for I-PAK, L S of D-PAK is measured between lead and
center of die contact
? I SD ≤ 6.0A, di/dt ≤ 340A/μs, V DD ≤ V (BR)DSS , ? Uses IRL520N data and test conditions.
T J ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IRLR120TRR
MOSFET N-CH 100V 7.7A DPAK
IRLR2703TRR
MOSFET N-CH 30V 23A DPAK
IRLR2705TR
MOSFET N-CH 55V 28A DPAK
IRLR2905TRR
MOSFET N-CH 55V 42A DPAK
IRLR3103TRR
MOSFET N-CH 30V 55A DPAK
IRLR3303TRRPBF
MOSFET N-CH 30V 35A DPAK
IRLR3303TRR
MOSFET N-CH 30V 35A DPAK
IRLR3410TRR
MOSFET N-CH 100V 17A DPAK
相关代理商/技术参数
IRLR120NTRRPBF
制造商:International Rectifier 功能描述:MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 10A 3PIN DPAK - Tape and Reel
IRLR120PBF
功能描述:MOSFET N-Chan 100V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLR120TR
功能描述:MOSFET N-Chan 100V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLR120TRL
功能描述:MOSFET N-Chan 100V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLR120TRLPBF
功能描述:MOSFET N-Chan 100V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLR120TRPBF
功能描述:MOSFET N-Chan 100V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLR120TRR
功能描述:MOSFET N-CH 100V 7.7A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRLR120TRRPBF
功能描述:MOSFET N-Chan 100V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube